GUMMEL POON MODEL PDF

This manual describes the modeling of a bipolar transistor using the Gummel- Poon model as implemented in the simulator SPICE. It should be mentioned that . Fig.2b shows the large signal schematic of the Gummel-Poon model. It represents the physical transistor: a current-controlled output current. Various parameters in the Gummel–Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent.

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Gummel-Poon Bipolar Model Extraction

The objective of each section is to isolate a device characteristic and then to optimize only those model parameters which account for this device behaviour. If necessary the pokn sequence can be run multiple times in order to achieve a good fit to the measured data.

In the BJT model, the parameters are very interdependent because of the inherent coupling mode the model equations. The measured values are later used in the extraction process to isolate individual parameters. The Agilent A high-frequency BJT model is a three-terminal version of the Gummel-Poon model, with a measurement and extraction methodology that has been developed specifically for high-frequency devices. If you have a support question, please click here. To extract the model, typical forward and reverse operation DC characteristics and reverse bias capacitance characteristics of each junction are required.

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They take you step-by-step through a BJT measurement and parameter extraction.

Gummel–Poon model

The procedures use a series of different setups to measure current or voltage versus bias under different bias conditions. Gummel-Poon Bipolar Model Extraction. The optimization sequence, which fully automates the extraction of this Gummel-Poon bipolar model example, has six sections.

In this way, goodness of fit to the reverse characteristics can be sacrificed in order to achieve a good model in forward operation. OK, don’t show me this again. This example describes how to extract a standard Gummel-Poon model for a bipolar transistor. The high-frequency BJT model provides improved accuracy for pion the AC parameters of a high-frequency device, by using a network analyzer to measure the device S-parameters.

Additionally, because accurate capacitance measurements are mosel difficult at high frequencies, the software computes the model junction capacitances from the measured S-parameter data, rather than using a CV meter. However, it is especially true of the bipolar Gummel-Poon model that certain values of the reverse characteristic parameters will affect the modeling of the forward operation and vice versa.

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The sequence also requires the least number of configuration changes. The purpose of the different measurement setups is to decouple the SPICE equations as much as mode. The procedures are arranged in the most logical sequence to allow earlier measured data or extracted parameters to be used as a basis for later measurements or extractions.

Since the most important operation of the bipolar transistor is the forward operation, this will be optimized after the reverse parameters. This chapter provides example procedures to enable you to use the software as a tool to measure your devices and extract their model parameter values.

It may be necessary to repeat the sequence several times to achieve the best model fit to your data. In the third section, both of the reverse datasets are included and all of the parameters again optimized to achieve the best fit to all of the reverse data together.